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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3PML package *High speed *High breakdown voltage *Built-in damper diode APPLICATIONS *Color www..com TV horizontal output application PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD5071 www..com Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 6 3.5 10 50 150 -55~150 UNIT V V V A A W 1 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD5071 www..com SYMBOL TYP. MAX UNIT VCEsat V Collector-emitter saturation voltage IC=2.5 A;IB=0.8A IC=2.5 A;IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IF=3.5A IC=3A;RL=66.7>;VCC=200V IB1=0.8A;IB2=-1.6A 40 8.0 V BEsat www..com Base-emitter saturation voltage 1.5 V ICBO IEBO hFE fT VF tf Collector cut-off current 10 A Emitter cut-off current 200 mA DC current gain 8 Transition frequency 3 MHz Diode forward voltage 2.0 V Fall time 0.4 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD5071 www..com www..com Fig.2 Outline dimensions 3 |
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